Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise

The files correspond to experimental results in paper: "<b>Thin Al</b><sub>1-<i>x</i></sub><b>Ga</b><i><sub>x</sub></i><b>As</b><sub>0.56</sub><b>Sb</b><sub>0.44</sub><b> diodes with low excess noise"</b> published in IEEE Journal of Selected Topics in Quantum Electronics, DOI: <a href="https://doi.org/10.1109/JSTQE.2017.2725441">https://doi.org/10.1109/JSTQE.2017.2725441</a><div><br></div><div>There are two types of files:</div><div>- .png, which correspond to the figures</div><div>- .csv, which are raw data in figures</div><div><br></div><div>This work reports the excess noise characterization in a series of Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.</div><div><br></div><div>The data consists of results from Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.</div>