10.15131/shef.data.5155822.v1 Xinxin Zhou Xinxin Zhou Lucas Pinel Lucas Pinel Simon Dimler Simon Dimler Shiyong Zhang Shiyong Zhang Jo Ng Jo Ng Chee Tan Chee Tan Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise The University of Sheffield 2017 Avalanche photodiodes (APDs) impact ionization noise measurements Compound Semiconductors Electrical and Electronic Engineering not elsewhere classified Photodetectors, Optical Sensors and Solar Cells 2017-07-14 10:08:17 Dataset https://orda.shef.ac.uk/articles/dataset/Data_for_paper_Thin_Al1-xGaxAs0_56Sb0_44_diodes_with_low_excess_noise/5155822 The files correspond to experimental results in paper: "<b>Thin Al</b><sub>1-<i>x</i></sub><b>Ga</b><i><sub>x</sub></i><b>As</b><sub>0.56</sub><b>Sb</b><sub>0.44</sub><b> diodes with low excess noise"</b> published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, <a href="http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=7985003">Issue: 2</a>, March-April 2018), DOI: <a href="https://doi.org/10.1109/JSTQE.2017.2725441">https://doi.org/10.1109/JSTQE.2017.2725441</a><div><br></div><div>There are two types of files:</div><div>- .png, which correspond to the figures</div><div>- .csv, which are raw data in figures</div><div><br></div><div>This work reports the excess noise characterization in a series of Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.</div><div><br></div><div>The data consists of results from Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.</div>