10.15131/shef.data.5155822.v1
Xinxin Zhou
Xinxin
Zhou
Lucas Pinel
Lucas
Pinel
Simon Dimler
Simon
Dimler
Shiyong Zhang
Shiyong
Zhang
Jo Ng
Jo
Ng
Chee Tan
Chee
Tan
Data for paper: Thin Al1-xGaxAs0.56Sb0.44 diodes with low excess noise
The University of Sheffield
2017
Avalanche photodiodes (APDs)
impact ionization
noise measurements
Compound Semiconductors
Electrical and Electronic Engineering not elsewhere classified
Photodetectors, Optical Sensors and Solar Cells
2017-07-14 10:08:17
Dataset
https://orda.shef.ac.uk/articles/dataset/Data_for_paper_Thin_Al1-xGaxAs0_56Sb0_44_diodes_with_low_excess_noise/5155822
The files correspond to experimental results in paper: "<b>Thin Al</b><sub>1-<i>x</i></sub><b>Ga</b><i><sub>x</sub></i><b>As</b><sub>0.56</sub><b>Sb</b><sub>0.44</sub><b> diodes with low excess noise"</b> published in IEEE Journal of Selected Topics in Quantum Electronics (Volume: 24, <a href="http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=7985003">Issue: 2</a>, March-April 2018), DOI: <a href="https://doi.org/10.1109/JSTQE.2017.2725441">https://doi.org/10.1109/JSTQE.2017.2725441</a><div><br></div><div>There are two types of files:</div><div>- .png, which correspond to the figures</div><div>- .csv, which are raw data in figures</div><div><br></div><div>This work reports the excess noise characterization in a series of Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) diodes with avalanche layer thickness of 110-116 nm.</div><div><br></div><div>The data consists of results from Al<sub>1-<i>x</i></sub>Ga<i><sub>x</sub></i>As<sub>0.56</sub>Sb<sub>0.44</sub> (<i>x</i> = 0, 0.05, 0.1, 0.15) photodiodes: dark and photocurrent, capacitance, avalanche gain, excess noise.</div>